6–18GHz 25W GaN Power Amplifier – CWNPA-0618-P25-FPC15
Category: News
Time: 2026-05-22
Summary:
Unmatched Core Performance
- Broad Frequency Coverage: Seamlessly spans 6 to 18GHz, covering C, X, and Ku bands for multi-band system flexibility.
- High Saturated Output Power: Typical 44.7dBm (25W) saturated output power ensures robust signal transmission and ample power headroom.
- Impressive Power Gain: 19.7dB typical power gain minimizes the need for additional amplification stages, simplifying system design.
- Superior Power-Added Efficiency (PAE): 31.9% typical PAE reduces DC power consumption and heat dissipation, enhancing system reliability and reducing operational costs.
- Stable DC Operation: Optimized for Vd=28V (drain voltage) and Vg=-1.8V (gate voltage), with a quiescent drain current of 3.0A and dynamic current of 3.3A for consistent CW performance.
Flexible Form Factors for Diverse Integration
- Bare Die: Compact 3.65mm × 3.9mm × 0.075mm size for ultra-small form-factor applications, ideal for high-density PCB integration.
- Packaged Module: Available in 19.05mm × 19.05mm or 15mm × 15mm 10-lead packages (tolerance ±0.1mm), with standardized pinouts for easy surface-mount assembly.
Robust Reliability & Safety
- Absolute Maximum Ratings: Supports up to +32V drain voltage, -5.0V minimum gate voltage, and +30dBm maximum input power.
- Wide Temperature Range: Operates reliably from -55°C to +125°C ambient temperature, with storage tolerance from -65°C to +150°C.
- Anti-Static Protection: As an electrostatic-sensitive device (ESD), it includes clear anti-static handling guidelines to prevent permanent damage during integration.
Ideal Applications
- Defense & Aerospace: Radar systems, electronic warfare (EW), and military communications.
- Satellite Communications (SatCom): VSAT terminals, Earth station transmitters, and broadband satellite links.
- 5G & Telecommunications: High-frequency base stations and mmWave infrastructure.
- Test & Measurement: High-power signal sources and RF test equipment.
Simplified Integration with Reference Designs
- Vg1/Vg2 and Vd1/Vd2 can be tied together for simplified biasing.
- Optional gate/drain modulation support (remove 10μF capacitors for modulation chip compatibility).
- Recommended bypass capacitors (0.1μF, 1000pF, 10μF) for stable DC biasing and noise suppression.
Elevate Your RF Systems Today
Contact us now to explore how the CWNPA-0618-P25-FPC15 can transform your RF designs and unlock new possibilities in wireless communication.
Keywords: 6–18GHz 25W GaN Power Amplifier – CWNPA-0618-P25-FPC15
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