Professional Microwave Power Amplifier Supplier

Home page

S-Band 2.7~3.1GHz GaN Internally Matched Power Transistors | CWMPA Series – Preferred Core for Radar & Communication RF Power Amplifiers

Time： 2026-07-30

Summary：

In high-end RF scenarios including weather radar, air traffic control detection, broadband private network communication and RF test transmission systems, high-power, high-efficiency and easy-to-integrate GaN power transistors determine the overall performance of equipment. The CWMPA series GaN internally matched power amplifiers cover four mature models: CWMPA-2729-P54B, CWMPA-2729-P54, CWMPA-2731-P54, CWMPA-2731-P55. Adopting mature GaN HEMT technology, they are specially designed for pulsed power amplification in 2.7~3.1GHz S-band. Built-in 50Ω impedance matching greatly reduces the difficulty of RF link development, providing a domestically manufactured high-reliability solution for all types of high-power RF transmitting equipment.

1. Full Product Portfolio to Meet Diverse Bandwidth, Voltage & Power Requirements

All four devices share identical packaging and standardized matching circuits, allowing flexible selection based on bandwidth, operating drain voltage, output power, gain and power added efficiency (PAE) to match various system index requirements:

CWMPA-2729-P54B

Operating frequency: Narrow band optimized for 2.7~2.9GHz
Standard operating Vds: +45V (lower voltage design for compact power supply modules)
Typical saturated output power: 55.1dBm, typical power gain: 14.1dB
Ultra-flat band response with maximum power flatness only 0.3dB under Pin=41dBm drive
Peak PAE up to 64.3%, stable efficiency across full narrow band
Max power dissipation: 94W
Perfect for low-voltage narrow-band meteorological radar, portable short-range detection transmitters and compact S-band signal sources.

CWMPA-2729-P54

Operating frequency: Optimized narrow band of 2.7~2.9GHz
Standard operating Vds: +50V
Typical saturated output power: 54.6dBm, typical power gain: 14.7dB
Ultra-flat gain response with maximum power flatness only 0.3dB, delivering outstanding power consistency across the band
Peak PAE up to 64.7% with lower static power consumption
Max power dissipation: 94W, stable long-term operation without thermal attenuation
Ideal for fixed-point weather radar and short-range detection equipment with standard 50V power systems.

CWMPA-2731-P54

Wide frequency coverage: 2.7~3.1GHz full S-band
Standard operating Vds: +50V
Typical saturated output power: 54.2dBm, typical power gain: 14.4dB
Balanced full-band efficiency with peak PAE reaching 64.5%
Complete test data under two input power levels (Pin=40dBm & Pin=41dBm)
The mainstream general-purpose model for universal S-band radar and private network communication systems, balancing wide bandwidth and energy efficiency.

CWMPA-2731-P55

Flagship high-power model of the series
Wide frequency coverage: 2.7~3.1GHz full S-band
Standard operating Vds: +50V
Typical saturated output power: 55.4dBm with sufficient output power margin
Typical power gain: 13.5dB, maximum in-band power flatness ≤0.7dB
Supports higher driving input power (Pin=42dBm)
Max power dissipation: 239W
Perfect for long-distance high-power detection devices and high-duty-cycle pulsed transmitters requiring large power reserves.

2. Five Core Advantages to Solve Critical RF Design Pain Points

2.1 Built-in 50Ω Internal Matching to Cut Development Cycle in Half

Each transistor is pre-matched to standard 50Ω RF impedance at input and output, eliminating the need for complex external LC matching networks and supporting multi-stage cascade power expansion.

Standard reference schematic diagrams and full component BOM are provided for rapid reuse. The recommended PCB material is Rogers RT/duroid5880 (0.508mm thickness, dielectric constant 3.48), enabling engineers to shorten prototype development and tuning cycles significantly.

2.2 GaN Wide Bandgap Technology for Superior Efficiency & High Voltage Withstand

Fabricated with GaN HEMT wide bandgap semiconductor process:

Absolute maximum drain-source voltage Vds: 120V; flexible standard operating voltage options: 45V / 50V for different power supply designs
Series-wide PAE exceeds 58%, with a peak value of 64.7%
Compared with traditional LDMOS devices, it reduces overall heat dissipation load, cooling structure volume and system cost. Stable pulsed saturated operation supports radar pulse transmission and high-power signal excitation applications.

2.3 Hermetic Metal-Ceramic Package for Stable Performance in Harsh Environments

Unified flange-style hermetic metal-ceramic housing with two assembly options: screw flange mounting and solder ball packaging. Standardized outline dimensions require a minimum slot width of 17.65mm for installation compatibility.

Operating temperature range: -40°C ~ +85°C (maximum case temperature limited to 85°C under full load)
Storage temperature range: -55°C ~ +125°C
Suitable for long-term service in vehicle-mounted, airborne and outdoor wide-temperature environments. Comprehensive anti-static operation guidelines are provided for this ESD-sensitive component to lower mass production failure rates.

2.4 Standardized Assembly Specifications for Mass Production Control

Complete mass production assembly guidelines are available for all four models with identical mechanical dimensions:

Recommended fastener: M2.0 screw with standard assembly torque of 0.6 N·m
Anti-loosening measures: spring washers, thread locker or top dispensing
Clearance requirements: ≥0.1mm between transistor pins and PCB; >0.1mm gap between input & output pins to prevent pin detachment
Two mounting methods (screw fastening or soldering) are compatible with automatic production lines and manual prototype debugging.

2.5 Full-Range Reliability Support & Customization Service

Full measured electrical data at all key frequency points (2.7/2.8/2.9/3.0/3.1GHz) are provided, including output power, drain current, compressed gain and PAE under standardized test conditions.

All final technical indicators and outline dimensions are subject to formal technical agreements. Customized products with equivalent power, higher efficiency, wider bandwidth or customized operating voltage can be developed to meet special equipment requirements.

3. Standard Power-Up & Operation Guidelines for Safe Use

Power supply sequence must be strictly followed: Apply negative gate voltage (Vg) first, then positive drain voltage (Vds) when powering on; cut off drain voltage first, then gate voltage when powering off.
Heat dissipation design is critical: Lower case temperature extends the service life of the transistor.
Ensure full grounding of all instruments and equipment during operation. As an ESD-sensitive device, anti-static protection must be implemented during storage, handling and assembly.
Select matched power supplies according to specific modulation modes and system index requirements; choose CWMPA-2729-P54B for 45V low-voltage power supply systems, and other models for standard 50V platforms.

Application Scenarios

Meteorological & air traffic control S-band radar
Low-voltage portable pulsed RF transmitters (CWMPA-2729-P54B)
Full-band S-band communication base stations & signal amplifiers
RF signal test & measurement equipment
Vehicle-mounted/airborne high-power RF emission modules
Short & long-range pulse detection systems

Customization Service

We support customized GaN power transistors with customized bandwidth, operating voltage, output power and efficiency indicators. Contact our technical team to get full datasheets, circuit reference files and sample testing support.

Keywords： S-Band 2.7~3.1GHz GaN Internally Matched Power Transistors | CWMPA Series – Preferred Core for Radar & Communication RF Power Amplifiers